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RTL030P02
Transistors
2.5V Drive Pch MOS FET
RTL030P02
Structure
Silicon P-channel
MOS FET
External dimensions (Unit : mm)
TUMT6
2.0
1.3
0.65 0.65
0.85Max.
0.77
Features
1) Low on-resistance. (90m ? at 2.5V)
(6)
(5)
(4)
0~0.1
2) High power package.
(1)
(2)
(3)
0.17
3) High speed switching.
4) Low voltage drive. (2.5V)
Applications
DC-DC converter
Packaging specifications
0.3
Abbreviated symbol : WN
Equivalent circuit
Type
RTL030P02
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
(6)
(5)
? 2
(4)
? 1
(1) Drain
(2) Drain
(1)
(2)
(3)
(3) Gate
(4) Source
Absolute maximum ratings (Ta=25 ° C)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(5) Drain
(6) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 20
± 12
Unit
V
V
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
Tch
Tstg
? 1
? 1
? 2
± 3
± 12
? 0.8
? 12
1
150
? 55 to + 150
A
A
A
A
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
125
Unit
° C / W
? Mounted on a ceramic board.
Rev.B
1/4
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